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| savantic semiconductor product specification silicon npn power transistors 2N5050 2n5051 2n5052 description with to-66 package high breakdown voltage excellent safe operating area applications designed for driver circuits,switching and amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N5050 125 2n5051 150 v cbo collector-base voltage 2n5052 open emitter 200 v 2N5050 125 2n5051 150 v ceo collector-emitter voltage 2n5052 open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 2 a p d total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 7.0 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N5050 2n5051 2n5052 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N5050 125 2n5051 150 v ceo(sus) collector-emitter sustaining voltage 2n5052 i c =0.1a ;i b =0 200 v v cesat collector-emitter saturation voltage i c =2a; i b =0.5a 1.2 v v besat base-emitter saturation voltage i c =2a; i b =0.5a 1.5 v v be base-emitter on voltage i c =750ma ; v ce =5v 1.2 v 2n4910 v ce =125v; i b =0 2n4911 v ce =150v; i b =0 i ceo collector cut-off current 2n4912 v ce =200v; i b =0 5.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =750ma ; v ce =5v 25 100 f t transition frequency i c =500ma;v ce =10v;f=1mhz 10 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N5050 2n5051 2n5052 package outline fig.2 outline dimensions |
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